2N930
BIPOLAR NPN SILICON AMPLIFIER TRANSISTORS
APPLICATIONS:
The 2N930 is designed for small general purpose and amplifier applications
VCBO Collector – Base Voltage VCEO Collector – Emitter Voltage VEBO Emitter – Base Voltage IC Collector Current
PD Total Device Dissipation @ TA=25°C Derate above 25°C PD Total Device Dissipation @ TC=25°C
Derate above 25°C TSTG, TJ Operating and Storage Temperature Range
45V 45V 5V 30mA
0.5W 350°C / W
1.2W 146°C / W –65 to +200°C
MECHANICAL DATA
Dimensions in mm (inches)
TO18 (TO-206AA) PACKAGE
ABSOLUTE MAXIMUM RATINGS (T
A= 25°C unless otherwise stated)
Pin 1 =EmitterUnderside View
Pin 2 = Base Pin 3 = Collector
1 3
2
2.54 (0.100) Nom.
0.48 (0.019) 0.41 (0.016)
dia.
5.84 (0.230) 5.31 (0.209) 4.95 (0.195) 4.52 (0.178)
5.33 (0.210) 4.32 (0.170)12.7 (0.500) min.
FEATURES
• SILICON PLANAR EPITAXIAL NPN TRANSISTOR
• HERMETICALLY SEALED METAL PACKAGE
• CECC SCREENING OPTIONS AVAILABLE
• SPACE QUALITY LEVELS AVAILABLE
Semelab plc.
Telephone +44(0)1455 556565. Fax +44(0)1455 552612.E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk
Document Number 5469 Issue 1
Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use.
Semelab encourages customers to verify that datasheets are current before placing orders.
Parameter Test Conditions Min. Typ. Max. Unit
V(BR)CEO* Collector – Emitter Breakdown Voltage V(BR)CBO Collector – Base Breakdown Voltage V(BR)EBO Emitter – Base Breakdown Voltage ICEO Collector Cut-off Current
ICBO Collector – Cut-off Current ICES Collector – Cut-off Current IEBO Emitter – Cut-off Current
VCE(sat)* Collector – Emitter Saturation Voltage VBE(sat)* Base – Emitter Saturation Voltage
hFE* DC Current Gain
fT Current Gain Bandwidth Product
Cob Output Capacitance hib Input Impedance hrb Voltage Feedback Ratio hob Output Admittance hfe Small Signal Current Gain
NF Noise Figure
V
nA nA µA nA
V
—
MHz
pF Ω x10-6 µmho
—
dB 45
45 5
2 10 10 10 10
1
0.7 0.9
100 300
20 150 600
30
8
25 32
600 1
150 600
3
2N930
IC= 10mA IB= 0 IC= 10µA IE= 0 IE= 10µA IC= 0 VCE= 5V IB= 0 VCB= 45V IE= 0 VCE= 45V VBE= 0
TA=170°C VBE= 5V IC= 0
IC= 10mA IB= 0.5mA IC= 10mA IB= 0.5mA IC= 10µA VCE= 5V
TA= - 55°C IC= 500µA VCE= 5V IC= 10mA VCE= 5V
IC= 500µA VCE= 5V f = 30MHz
IE= 1mA VCB= 5V f = 1KHz
IE= 1mA VCB= 5V f = 1KHz
VCE= 5V IC= 10µA RS= 10kΩ
f = 10Hz to 15.7kHz
ELECTRICAL CHARACTERISTICS
(TA = 25°C unless otherwise stated)* Pulse Test: tp≤300µs, δ ≤2%
OFF CHARACTERISTICS
ON CHARACTERISTICS
SMALL SIGNAL CHARACTERISTICS
Semelab plc.
Telephone +44(0)1455 556565. Fax +44(0)1455 552612.E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk
Document Number 5469 Issue 1
Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use.
Semelab encourages customers to verify that datasheets are current before placing orders.
